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The Blue Laser Diode: The Complete Story | SpringerLink
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The Blue Laser Diode

The Complete Story

  • Book
  • © 2000

Overview

Authors:
  1. Shuji Nakamura

    1. Materials Dept., University of California, Santa Barbara, USA

  2. Stephen Pearton

    1. Dept. of Materials Science and Engineering, University of Florida, Gainesville, USA

  3. Gerhard Fasol

    1. Eurotechnology Japan Ltd., Shinjuku-ku, Tokyo 160, Japan

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About this book

Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

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Table of contents (15 chapters)

  1. Front Matter

    Pages I-XVI
    Download chapter PDF

  2. Introduction

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 1-5

  3. Background

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 7-28

  4. Physics of Gallium Nitride and Related Compounds

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 29-45

  5. GaN Growth

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 47-88

  6. p-Type GaN Obtained by Electron Beam Irradiation

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 89-101

  7. n-Type GaN

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 103-112

  8. p-Type GaN

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 113-147

  9. InGaN

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 149-192

  10. Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 193-214

  11. InGaN Single-Quantum-Well LEDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 215-235

  12. Room-Temperature Pulsed Operation of Laser Diodes

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 237-278

  13. Emission Mechanisms of LEDs and LDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 279-289

  14. Room Temperature CW Operation of InGaN MQW LDs

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 291-318

  15. Latest Results: Lasers with Self-Organized InGaN Quantum Dots

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 319-333

  16. Conclusions

    • Shuji Nakamura, Stephen Pearton, Gerhard Fasol
    Pages 335-337

  17. Back Matter

    Pages 339-368
    Download chapter PDF
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Reviews

FROM A REVIEW OF THE FIRST EDITION
"The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed."
(NEW SCIENTIST)

Authors and Affiliations

  • Materials Dept., University of California, Santa Barbara, USA

    Shuji Nakamura

  • Dept. of Materials Science and Engineering, University of Florida, Gainesville, USA

    Stephen Pearton

  • Eurotechnology Japan Ltd., Shinjuku-ku, Tokyo 160, Japan

    Gerhard Fasol

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